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Defect Reduction Paths in SiC Epitaxy

Published online by Cambridge University Press:  11 June 2014

J. Zhang,
D.M. Hansen,
V.M. Torres,
B. Thomas,
G. Chung,
H. Makoto,
I. Manning,
J. Quast,
C. Whiteley and
E.K. Sanchez
...Show all authors
J. Zhang
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
D.M. Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
V.M. Torres
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
B. Thomas
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
G. Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
H. Makoto
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
I. Manning
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
J. Quast
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
C. Whiteley
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
E.K. Sanchez
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
S. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
M.J. Loboda
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
H. Wang
Affiliation:
Department of Materials Sci. and Engr., Stony Brook University, Stony Brook, New York, 11794, USA
F. Wu
Affiliation:
Department of Materials Sci. and Engr., Stony Brook University, Stony Brook, New York, 11794, USA
M. Dudley
Affiliation:
Department of Materials Sci. and Engr., Stony Brook University, Stony Brook, New York, 11794, USA
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Abstract

This paper discusses formation mechanisms and potential paths to reduce defect density in current SiC epitaxy technology. Comprehensive optimization efforts have resulted in defect density measured by laser light scattering below 0.5 cm-2 for 30 um thick epi wafers. Possible approaches to reduce basal plane dislocations and mitigate interfacial dislocations are discussed. The progress in epitaxy defect reduction has been made on the foundation of the high quality 100mm substrates. The average and median BPD density is 700 cm-2 and 500 cm-2, respectively, and a low TSD density is also achieved simultaneously with both average and median values around 350 cm-2. High quality and low stress 150mm substrates have been obtained with very low TSD density of <150 cm-2.

Keywords

chemical vapor deposition (CVD) (deposition)defectsepitaxy

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014, mrss14-1693-dd01-05
Copyright
Copyright © Materials Research Society 2014 

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