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Defect Structure and Dynamics in Silicon

Published online by Cambridge University Press:  25 February 2011

S. T. Pantelides ,
R. Car ,
P. J. Kelly  and
A. Oshiyama
S. T. Pantelides
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
R. Car
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
P. J. Kelly
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
A. Oshiyama
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

This paper gives a brief account of recent calculations of equilibrium configurations, formation energies, and migration energies of intrinsic lattice defects (vacancies, self-interstitials) and complexes of dopant impurities (phosphorus, aluminum) with these defects. The results have been used to provide a comprehensive interpretation of low- and high-temperature diffusion data.

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References

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