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The Defect Structure of BaTiO3 Thin Films

Published online by Cambridge University Press:  21 February 2011

L.A. Wills and
B.W. Wessels
L.A. Wills
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

The defect structure of BaTiO3 thin films grown on (100) Si was examined using transient photocapacitance spectroscopy. The concentration, optical cross section and associated energy levels of both native and impurity defects in as-grown and annealed BaTiO3 films were evaluated. Deep level defects withpeak energies of Ev+1.8, Ev+2.4, Ev+2.7, Ev+3.0-3.1 and Ev+3.2-3.3 eV were observed in the as-grown films. Upon vacuum annealing, the concentration of the traps at Ev+3.0 and Ev+3.2 eV increased while the concentration of the traps at Ev+ 1.8 and Ev+2.4 eV decreased. The levels at Ev+3.0-3.1 and Ev+3.2-3.3 eV are attributed to oxygen vacancies. The other levels are tentatively ascribed to Fe and Fe related defects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993, 409
Copyright
Copyright © Materials Research Society 1993

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