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Defects in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

D. K. Biegelsen
D. K. Biegelsen*
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, CA 94304
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Abstract

In this paper we argue that amorphous silicon can be treated as a relaxed continuous random network. The optical and electronic properties are controlled by localized gap states which arise from characteristic features of a disordered tetrahedrally-bonded covalent network. Experimental results are reviewed which indicate that the dominant (perhaps only) electrically-active defect in hydrogenated amorphous silicon is the topologically distinct, silicon dangling bond. Finally, we suggest that the same, disorder-related characteristics might also typify the electronic properties of some macroscopic crystalline silicon defects.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 75
Copyright
Copyright © Materials Research Society 1982

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References

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