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Defects in Low-k Insulators (κ=2.5 – 2.0): ESR Analysis and Charge Injection

Published online by Cambridge University Press:  18 August 2011

V. V. Afanas’ev,
K. Keunen,
A. P. D. Nguyen,
M. Jivanescu,
A. Stesmans,
Zs. Tokei,
M. R. Baklanov and
G. P. Beyer
V. V. Afanas’ev
Affiliation:
Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
K. Keunen
Affiliation:
Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
A. P. D. Nguyen
Affiliation:
Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
M. Jivanescu
Affiliation:
Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
A. Stesmans
Affiliation:
Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
Zs. Tokei
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. R. Baklanov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. P. Beyer
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Electron spin resonance study of low-κ insulating layers reveals that from a defect perspective these materials resemble oxygen-rich silicon dioxide matrices. The films fabricated using chemical vapor deposition in combination with porogen technology also contain a considerable amount of residual carbon in the form of clusters. Furthermore, ion sputtering damage generates additional defects provisionally identified as dangling bonds in the silicon oxycarbide clusters. The density of these defects is found to increase with increasing porosity of the low-κ insulator. Nevertheless, a lower defect density may be attained if using a porogen-free self-assembly technology.

Keywords

defectselectron spin resonanceinsulator

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References

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