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Degradation of TiSi2/n+-Polysilicon Interfaces Due to High Temperature Processing

Published online by Cambridge University Press:  22 February 2011

K. Shenai,
P. A. Piacente,
G. A. Smith,
N. Lewis,
M. D. Mcconnell,
J. F. Norton,
E. L. Hall and
B. J. Baliga
K. Shenai
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
P. A. Piacente
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
G. A. Smith
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
N. Lewis
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
M. D. Mcconnell
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
J. F. Norton
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
E. L. Hall
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
B. J. Baliga
Affiliation:
General Electric Corporate Research and Development, River Road, Schenectady, NY 12309
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Abstract

Analytical results obtained from detailed Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), Auger analysis, Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM) of ∼ 2000Å TiSi2/n+ polysilicon interfaces are reported for thermally annealed silicide samples and silicide samples subjected to further high temperature processing. The LPCVD polysilicon was heavily POCI3 doped at 900°C and TiSi was formed by rf sputtering 1000Å Ti and forming the silicide using ?wo successive thermal anneals at 600°C and 800°C in forming gas resulting in a silicide sheet resistance R of 1.45 Ω/□. The high temperature process stability of the silicide – polysilicon interface was investigated by systematically stressing the polycide at process temperatures in the range of 700° C to 1100° C. The silicide was stable for temperatures up to 900° C; however, significant degradation in the silicide sheet resistance, phosphorus, silicon, and titanium redistribution, and agglomeration and film breakage of TiSi2 were observed at higher process temperatures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987, 149
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Baliga, B. J., and Chen, D. Y., Power Transistors, New York:IEEE Press, 1984.Google Scholar
[2] Chang, M. F., Pifer, G., Yilmaz, H., Wildi, E. J., Hodgins, R. G., Owyang, K., and Adler, M. S., IEEE Trans. Electron Dev., ED–33, p. 1992 (1986).Google Scholar
[3] Shenai, K., Korman, C. S., Baliga, B. J., and Piacente, P. A., General Electric TIS Rep. No. 87CRD207 (1987).Google Scholar
[4] Dolny, G. M., Wheatly, C. F. Jr., and Ronan, H. R., in Proc. High Frequency Power Conversion, p. 149 (1986).Google Scholar
[5] Lin, H. C., Arzoumanian, Y. F., Halsor, J. L., Giuliano, M. N., and Benz, H. F., IEEE Trans. Electron Dev., ED–22, p. 255 (1975).Google Scholar
[6] Brown, D. M., Engeler, W. E., Garfinkel, M., and Gray, P. V., Solid-State Electron. 11, p. 1105, (1968).Google Scholar
[7] Sinha, A. K., in Proc. 1st Int. Symp. VLSI Sci. Technol., p. 173, (1982).Google Scholar
[8] Murarka, S. P., Silicides for VLSI Applications, Academic Press, (1983).Google Scholar
[9] Ting, C. Y., d'Heurle, F. M., Iyer, S. S., and Fryer, P. M., J. Electrochem. Soc. 133, p. 2621 (1986).Google Scholar
[10] Shenai, K., Piacente, P. A., Smith, G. A., Lewis, N., McConnell, M. D., and Baliga, B. J., in Proc. Workshop on Tungsten and Other Refractory Metals for VLSI Applications, Material Research Society, Pittsburgh, PA (1987).Google Scholar
[11] Shenai, K., Piacente, P. A., and Baliga, B. J., in Proc. Symposium F: SiO2 and its Interfaces, 1987 Fall Mtg. of the Material Research Society, Bosion, MA (1987).Google Scholar
[12] Feldman, L. C., and Mayer, J. W., Fundamentals of Surface and Thin Film Analysis, North-Holland, (1986).Google Scholar
[13] These simulations were done using the RUMP program from Cornell University.Google Scholar