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Delta Doping for Deep Level Analysis in Semiconductors

Published online by Cambridge University Press:  25 February 2011

J. Piprek,
P. Krispin,
H. Kostial and
K. W. BÖer
J. Piprek
Affiliation:
Humboldt Universität, Fachbereich Physik, Invalidenstr. 110, 0–1040 Berlin, Germany
P. Krispin
Affiliation:
Paul-Drude-Institut, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
H. Kostial
Affiliation:
Paul-Drude-Institut, Hausvogteiplatz 5–7, 0–1086 Berlin, Germany
K. W. BÖer
Affiliation:
University of Delaware, Material Science Program, Newark, DE 19716
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Abstract

The occupation of deep-level defects in semiconductors is investigated by delta-doping such impurities at a specified distance from the metallurgical boundary within Schottky diodes. Capacitance-voltage characteristics are analyzed using ID device simulation software. These characteristics change significantly depending on the deep-level energy and the sheet position. This new approach to deep-level analysis is applied to Schottky diodes on MBE-grown n-GaAs with a planar titanium doped sheet. At moderate Ti concentrations the well-known Ti acceptor level near Ec -0.2 eV governs the electrical properties. In addition, two other types of Ti defects are found.

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References

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