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Depth Profiles of Medium Energy Phosphorus Implants into Silicon

Published online by Cambridge University Press:  21 February 2011

J. P. Lavine,
L. Zheng,
P. M. Whalen and
D. F. Downey
J. P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
L. Zheng
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
P. M. Whalen
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
D. F. Downey
Affiliation:
Varian Ion Implant Systems, Gloucester, MA 01930-2297
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Abstract

Secondary ion mass spectrometry (SIMS) is used to produce depth profiles of ion-implanted phosphorus in silicon. The implant energies are 250, 500, and 750 keV, and there is a 0.06-μm thick oxide on the silicon. The experimental profiles are compared with predictions from a variety of simulation programs, most of which give larger projected ranges than the data. The silicon crystal structure needs to be included in the calculations to produce projected ranges and depth profiles that agree with the present experimental data and with data from the literature.

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