Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-15T22:52:45.663Z Has data issue: false hasContentIssue false
  • English
  • Français

Depth Profiling of Cu(In,Ga)Se2 by Grazing Incidence X-ray Diffraction

Published online by Cambridge University Press:  01 February 2011

I.M. Kötschau,
G. Bilger and
H.W. Schock
I.M. Kötschau
Affiliation:
Hahn-Meitner-Institute, Berlin, Germany
G. Bilger
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Garmany
H.W. Schock
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Garmany
Get access

Abstract

Grazing incidence X-ray diffraction (GIXRD) in conjunction with a layer absorption modeling algorithm is a powerful tool for studying the structural properties of polycrystaline thin films. A typical application is the refinement of compositional depth profiles. Of genera interest are the depth profile of the Ga/(In+Ga)-ratio over the entire thickness of the thin film, as well as the depth profile of th Cu/(In+Ga)-ratio near the surface. In this respect the three stage process is a particular interesting deposition technique. A remarkable recrystalization of the entire thin film at the end of the second stage has a strong impact on Ga-gradients as well as on the Cu-depletion close to the surface. In this contribution we use the GIXRD technique to refine composititional depth profiles obtained by secondary ion mass spectrometry (SIMS). We demonstrate that structura changes near the surface due to the recrystalization can be monitored. In addition we are able measure the depth of a Cu-depleted surface layer with high accuracy.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003, B6.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Karg, F.H., Solar Energy Materials & Solar Cells 66 (2001), 645.Google Scholar
[2] Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F. and Noufi, R., Prog. Photovoltaic Res. Appl. 7 (1999), 311.Google Scholar
[3] Schmid, D., Ruckh, M., Grunwald, F. and Schock, H.W., J. Appl. Phys. 73 (1993), 2902.Google Scholar
[4] Mickelsen, R. and Chen, W.: Development of a 9.4% efficient thin-fulm CulnSe2/CdS solar cell, in: IEEE Transaction. (1981).Google Scholar
[5] Gabor, A.M.: The conversion of (In,Ga)2Se3 thin films to Cu(In,Ga)Se2 for application to photovoltaic solar cells. University of Colorado, Phd thesis, 1995.Google Scholar
[6] Contreras, M.A., Tuttle, J., Gabor, A., Tennant, A., Ramanathan, K., Asher, S., Franz, A., Keane, J., Wang, L. und Noufi, R., Solar Energy Materials & Solar Cells 41/42 (1996), 231.Google Scholar
[7] Kötschau, I.: Strukturelle Eigenschatfen von Cu(In,Ga)(S,Se)2 Dünnfilmen. Universität Stuttgart, Phd thesis, 2003.Google Scholar
[8] Kötschau, I.M. und Schock, H.W., J. Phys. Chem. Solids in press (2003).Google Scholar
[9] Suri, D.K., Nagpal, K.C. and Chadha, G.K., J. Appl. Cryst. 22 (1989), 578.Google Scholar
[10] Young, R.A.. in IUCr Monographs on Crystallography, published by Young, R. A., Vol. 5, 1. edn., Oxford University Press, Oxford (1995), p. 132–166.Google Scholar
[11] Contreras, M.A., Wiesner, H., Tuttle, J., Ramanathan, K. and Noufi, R., Solar Energy Materials and Solar Cells 49 (1997), 239.Google Scholar
[12] Klenk, R., Walter, T., Schmid, D. und Schock, H., J. Appl. Phys. 32 (1993), 57.Google Scholar
[13] Lundberg, O., Lu, J., Rockett, A., Edoff, M. und Stolt, L., J. Phys. Chem. Solids in press (2003).Google Scholar