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Development of GaN and InGaN Gratings by Dry Etching

Published online by Cambridge University Press:  10 February 2011

J. W. Lee,
J. Hong,
J. D. Mackenzie,
C. R. Abernathy,
S. J. Pearton,
F. Ren and
P. F. Sciortino Jr
J. W. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
J. Hong
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
J. D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill NJ 07974
P. F. Sciortino Jr
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill NJ 07974
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Abstract

Sub-micron periodic gratings with pitch ∼3,000Å were formed in GaN and InGaN using holographic lithography and room temperature ECR BCl3/N2 dry etching at moderate microwave (500W) and rf (100W) powers. The process produces uniform gratings without the need for elevated sample temperatures during the etch step.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997, 379
Copyright
Copyright © Materials Research Society 1997

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References

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