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Diamond Heteroepitaxial Lateral Overgrowth

Published online by Cambridge University Press:  24 February 2015

Y-H Tang,
B. Bi and
B. Golding
Y-H Tang
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
B. Bi
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
B. Golding
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
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Abstract

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. The internal stress is found to decrease as sample thickness increases.

Keywords

diamondcrystal growthplasma-enhanced CVD (PECVD) (deposition)

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