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Dielectric GlueWafer Bonding For 3D ICs

Published online by Cambridge University Press:  01 February 2011

Y. Kwon,
A. Jinda,
J.J. McMahon,
J.Q. Lu,
R.J. Gutmann and
T.S. Cale
Y. Kwon
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
A. Jinda
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J.J. McMahon
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J.Q. Lu
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
R.J. Gutmann
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
T.S. Cale
Affiliation:
Focus Center – New York, Rensselaer: Interconnections for Gigascale Integration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

A process to bond 200 mm wafers for wafer-level three-dimensional integrated circuit (3D-IC) applications is discussed. Four-point bending is used to quantify the bonding strength and identify the weak interface. Using benzocylcobutene (BCB) glue, the bonding strength depends on (1) glue thickness, (2) glue film preparation, and (3) materials and structures on the wafer(s). A seamless BCB-to-BCB bond interface provides the highest bonding strength compared to other interfaces in these structures (> 34 J/m2). Mechanical and electrical properties of a wafer with copper interconnect structures are preserved after wafer bonding and wafer thinning, confirming the potential of the bonding process for 3D ICs.

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References

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