Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-14T23:32:15.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Dielectrics for GaN Based MIS-Diodes

Published online by Cambridge University Press:  10 February 2011

F. Ren,
C. R. Abernathy,
J. D. MacKenzie,
B. P. Gila,
S. J. Pearton,
M. Hong,
M. Macos,
M. J. Schurman,
A. G Baca and
R. J. Shul
F. Ren
Affiliation:
University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611
J. D. MacKenzie
Affiliation:
University of Florida, Gainesville, FL 32611
B. P. Gila
Affiliation:
University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
M. Macos
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
M. J. Schurman
Affiliation:
EMCORE Inc., Somerset, NJ 07061
A. G Baca
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185
Get access

Abstract

GaN MIS diodes were demonstrated utilizing AIN and Ga2O3(Gd2O3) as insulators. A 345 Åof AIN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga2O3(Gd2O3) growth, a multi-MBE chamber was used and a 195 Å oxide is E-beam evaporated from a single crystal source of Ga5Gd3O12. The forward breakdown voltage of AlN and Ga2O3( Gd2O3) diodes are 5V and 6V, respectively, which are significantly improved from ˜1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from ccumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997, 443
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Licitra, C., Musumeci, S., Raciti, A., Gallauzo, A. U., Letor, R., and Melito, M., IEEE Trans. on Power Electronics, 10, 373 (1995)Google Scholar
2. Chao, P. C., Duh, K. H. G., Ho, P., Smith, P. M., Ballingall, J. M., Jabra, A. A., and Tiberio, R. C., Electron Lett., 25, 504 (1989).Google Scholar
3. Weitzel, C. E., Palmour, J. W., Carter, C. H. Jr., Moore, K., Norquist, K. J., Allen, S., Thero, C. and Bhatnagar, M., IEEE Electron Dev., 43, 1732 (1996).10.1109/16.536819Google Scholar
4. Shin, M. W., Kordas, T. J., and Trew, R. J., Proc. of International Symp. on Power Semicond. Dev. & ICs, Japan, 497 (1995)Google Scholar
5. Binari, S.C., Proc. Electrochem. Soc., 95–21, 136 (1995).Google Scholar
6. Kruppa, W., Binari, S. C., and Doverspike, K., Electron. Lett., 31, 1951 (1995).Google Scholar
7. Minsky, M.S., White, M. and Hu, E.L., Appl. Phys. Lett., 68, 1531 (1996).Google Scholar
8. Shul, R. J., Kilcoyne, S. R, Crawford, M. H., Parmeter, J. E., Vartuli, C. B., Abernathy, C. R., and Pearton, S. J., Appl. Phys. Lett., 66, 1761 (1995).Google Scholar
9. Pearton, S. J. Abernathy, C. R., and Ren, E, Appl. Phys. Lett., 64, 3643 (1994).Google Scholar
10. Passlack, M., Hong, J. P. Mannaerts, R. L. Opila, ,Chu, S. N. G., Moriya, N., Ren, F., and Kwo, J., IEEE Trans. electron Dev., 44, 214(1997).Google Scholar
11. Ren, , Hong, M., Kuo, J. M., Hobson, W. S., Lothian, J. R., Tsai, H. S., Lin, J., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Chen, Y. K., and Cho, A. Y., 1997 IEEE GaAs IC Symposium, Anaheim, CA, October 12–15, (1997).Google Scholar
12. Noh, D. Y., Hwu, Y., kim, H K., and Hong, M. Phys. Rev., B51, 4441(1995).Google Scholar
13. Parratt, L. G., Phys. Rev., 95, 359(1954).Google Scholar
14. Schurman, M. J., Slagaj, T., Tran, C., Karlicek, R. Jr.,,Ferguson, I., Stall, R., A Thompson, Materials Science & Engineering B: Solid-State Materials for Advanced Technol. B43, 222(1997).Google Scholar
15. Abernathy, C. R., MacKenzie, J. D., Pearton, S. J. and Hobson, W. S., Appl. Phys. Lett., 66, 1969(1995).Google Scholar
16. Hong, M., Passlack, M., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci Technol. B14, 2297(1996).Google Scholar