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Diffusion barriers for CeFe4Sb12/Cu thermoelectric devices

Published online by Cambridge University Press:  22 February 2013

Laetitia Boulat,
Romain Viennois,
Didier Ravot and
Nicole Fréty
Laetitia Boulat
Affiliation:
Université Montpellier 2, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5, France
Romain Viennois
Affiliation:
Université Montpellier 2, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5, France
Didier Ravot
Affiliation:
Université Montpellier 2, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5, France
Nicole Fréty
Affiliation:
Université Montpellier 2, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, Place E. Bataillon, 34095 Montpellier Cedex 5, France
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Abstract

The efficiency of a tantalum nitride interlayer as a diffusion barrier for CeFe4Sb12 thermoelectric material against electrode copper material has been investigated. The thermal stability of CeFe4Sb12/TaN/Cu stackings has been investigated after annealing at 600°C from a microstructural study. CeFe4Sb12 and Cu appear to chemically react through the formation of CeCu2 and Cu2Sb phases whereas no reaction is observed for CeFe4Sb12 with TaN. This study showed that the TaN interlayer cannot inhibit the diffusion of Sb from the skutterudite substrate to the copper electrode but prevents the diffusion of Ce and consequently the formation of the CeCu2 phase.

Keywords

thermoelectricitybarrier layerdiffusion

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