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Diffusion Barriers for Mobile Ions in 256M DRAMs

Published online by Cambridge University Press:  10 February 2011

J. P. Gambino,
C. C. Parks,
S. Hegde and
A. G. Domenicucci
J. P. Gambino
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
C. C. Parks
Affiliation:
IBM Analytical Services, Hopewell Junction, NY 12533
S. Hegde
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
A. G. Domenicucci
Affiliation:
IBM Analytical Services, Hopewell Junction, NY 12533
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Abstract

In this study, we investigate the diffusion of mobile ions through thin PSG or SiN layers using secondary ion mass spectrometry (SIMS). The diffusivity of Na through either layer is about 100,000X slower than through SiO2. Hence, thin layers of these materials are effective barriers for short anneals at 400°C. However, there is significant diffusion of both Na and K through these layers at 550°C. This suggests that improved cleans will be required to remove mobile ion contamination after interconnect processes.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999, 229
Copyright
Copyright © Materials Research Society 1999

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