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Diffusion Mechanisms and Nonequilibrium Defects in SI

Published online by Cambridge University Press:  21 February 2011

D. Mathiot and
J. C. Pfister
D. Mathiot
Affiliation:
CNET - CNS - Chemin du Vieux Chêne - BP: 98-38243 Meylan Cedex - FRANCE
J. C. Pfister
Affiliation:
CNET - CNS - Chemin du Vieux Chêne - BP: 98-38243 Meylan Cedex - FRANCE
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Abstract

The problem of the respective contributions of vacancies and self interstitials to diffusion mechanims in silicon is clarified by using a consistent model for the diffuion of P, As and B which involves the resolution of the coupled continuity equations for the impurities, the vacancies and the self-interstitials. This model allows also the understanding of basic features concerning the kinetics of the point defects in presence of impurities.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984, 117
Copyright
Copyright © Materials Research Society 1985

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References

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