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Direct Nanoscale Patterning by Atomic Manipulation

Published online by Cambridge University Press:  15 February 2011

Craig T. Salling
Craig T. Salling*
Affiliation:
University of Wisconsin-Madison, Engineering Research Building, Madison, WI, 53706
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Abstract

The ability to create atomic-scale structures with the scanning tunneling microscope (STM) plays an important role in the development of a future nanoscale technology. I briefly review the various modes of STM-based fabrication and atomic manipulation. I focus on using a UHV-STM to directly pattern the Si(001) surface by atomic manipulation at room temperature. By carefully adjusting the tip morphology and pulse voltage, a single atomic layer can be removed from the sample surface to define features one atom deep. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Trenches ∼3 nm wide and 2–3 atomic layers deep can be created with less stringent control of patterning parameters. Direct patterning provides a straightforward route to the fabrication of nanoscale test structures under UHV conditions of cleanliness.

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