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Direct Sub-Lattice Imaging of Interface Dislocation Structures in CdTe/GaAs(001)

Published online by Cambridge University Press:  21 February 2011

A. J. McGibbon,
S. J. Pennycook,
J. E. Angelo and
M. J. Mills
A. J. McGibbon
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6031, USA
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6031, USA
J. E. Angelo
Affiliation:
Sandia National Laboratories, Livermore, CA, USA
M. J. Mills
Affiliation:
Sandia National Laboratories, Livermore, CA, USA
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Abstract

In this paper, we present directly interpretable atomic resolution images of dislocation structures at interfaces in CdTe/GaAs(001) systems. This is achieved using the technique of Z-contrast imaging in a 300kV scanning transmission electron microscope in conjunction with maximum entropy image analysis. In addition to being used to further the understanding of the relationship between growth conditions and exhibited properties, the data presented provides direct information on the atomic arrangements at dislocation cores.

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References

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