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The Direct-Write Polymer Field-Effect Transistor

Published online by Cambridge University Press:  11 February 2011

M. I. Sluch ,
R. M. Taylor  and
K. H. Church
M. I. Sluch
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
R. M. Taylor
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
K. H. Church
Affiliation:
Sciperio, Inc., 5202–2 North Richmond Hill Road, Stillwater, OK 74075, U.S.A.
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Abstract

Field-effect transistors (FET's) have been directly written onto glass and Si substrates. The FET';s use the regioregular conjugated polymer poly(hexylthiophene) as the active semiconductor, with a formed polyurethane insulator layer and drain, source, and gate electrodes written in Ag. The FET's were fabricated solely by direct writing techniques. The low processing temperatures, the elimination of photolithography, and the flexibility of the direct writing process make this technology especially attractive for low-frequency applications.

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