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A Dishing Model for STI CMP Process

Published online by Cambridge University Press:  01 February 2011

Shih-Hsiang Chang
Shih-Hsiang Chang*
Affiliation:
Department of Mechanical Engineering, Far East College, 49, Chung-Hwa Rd., Hsin-Shih, Tainan 744, Taiwan, ROC.
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Abstract

It is well known that oxide dishing occurring in STI CMP leads to considerable sidewall and edge-parasitic conduction. Thus, a closed-form solution for quantitative prediction of oxide dishing is needed. A contact-mechanics-based approach to describe the steady-state oxide dishing occurring in STI CMP process is presented. The theory is validated through comparison with experimental data in the literature. Once validated, the model is used to quantify the effect of pattern geometry on oxide dishing. It is shown that the predictions of the model agree reasonably well with the experimental results measured in overpolishing time.

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