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Dislocation Defect States in Deformed Silicon

Published online by Cambridge University Press:  15 February 2011

J. R. Patel and
L. C. Kimerling
J. R. Patel
Affiliation:
Bell Laboratories, Murray Hill, N. J. 07974, USA
L. C. Kimerling
Affiliation:
Bell Laboratories, Murray Hill, N. J. 07974, USA
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Abstract

Transient junction capacitance measurements on deformed silicon reveal a variety of states after deformation. Upon annealing or following more homogeneous deformation the defect spectrum shows a single broad feature. A state at E(0.38) has been tentatively assigned to defect sites along the dislocation. A broad band of states at H(0.35) is postulated to represent states due to the reconstructed dislocation core.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 273
Copyright
Copyright © Materials Research Society 1981

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References

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