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Dislocation Detection by MeV Ion Channelling

Published online by Cambridge University Press:  26 February 2011

Leszek S. Wielunski
Leszek S. Wielunski*
Affiliation:
CSIRO Division of Materials Science and Technology, PMB-7, Menai, NSW. 2234, Australia.
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Abstract

MeV H+ and He+ ion channelling has been used to characterise the post annealing, residual ion implantation damage in silicon. The observed energy dependence of direct scattering peaks agrees with theoretical predictions for direct scattering on dislocations. Similar peaks are observed in the channelling spectrum from the hetero-epitaxial structure In0.3Ga0.7 As on GaAs and are also interpreted as direct scattering on interfacial dislocations. The sensitivity for dislocation detection by this technique is about 1×105 cm−1 therefore, when high dislocation densities are expected, it is suggested that direct scattering on dislocations should be included in the analysis of channelling data.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987, 547
Copyright
Copyright © Materials Research Society 1988

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References

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