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Dislocation Nucleation from a Surface CUSP

Published online by Cambridge University Press:  15 February 2011

Jiangwei Li,
Cheng-hsin Chiu and
Huajian Gao
Jiangwei Li
Affiliation:
Division of Applied Mechanics, Stanford University, CA 94305.
Cheng-hsin Chiu
Affiliation:
Division of Applied Mechanics, Stanford University, CA 94305.
Huajian Gao
Affiliation:
Division of Applied Mechanics, Stanford University, CA 94305.
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Abstract

Theoretical and experimental studies have suggested that surface roughness may significantly enhance the nucleation of misfit dislocations in a strained heteroepitaxial film, especially in view of a stress-induced roughening instability which tends to form cusp-like stress singularities along the film surface. In this paper, the process of dislocation nucleation is perceived as a single dislocation emerging from a gradually sharpening surface groove. An analysis similar to the Rice-Thomson model for dislocation nucleation from a crack tip is carried out to determine the nucleation condition in terms of the depth and curvature of the surface groove. Specific applications are made to Si1−xGex alloy films on Si (100) substrates.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993, 303
Copyright
Copyright © Materials Research Society 1994

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References

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