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Dislocation Velocities In Gesi Bulk Alloys

Published online by Cambridge University Press:  15 February 2011

I. Yonenaga
I. Yonenaga*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
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Abstract

The mechanical strength and dislocation velocities in single crystal Ge1−xSix alloys grown by the Czochralski method were investigated by compressive deformation and by the etch pit technique, respectively. In the temperature range 450 – 700 °C and the stress range 3 – 20 MPa, the dislocation velocity in the GeSi alloys with x = 0.004 – 0.053 decreases monotonously with an increase in the Si content, reaching about a quarter of that in Ge at x = 0.053, and can be expressed as a function of the stress and the temperature. The yield stress of the GeSi alloy increases with increasing Si content from x = 0 to 0.4 and is temperature-insensitive at high temperatures, showing that the flow stress of alloy has an athermal component which is absent in elemental or compound semiconductors.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996, 337
Copyright
Copyright © Materials Research Society 1997

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