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Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching

Published online by Cambridge University Press:  01 February 2011

Masahide Gotoh,
Takeshi Tawara,
Shun-ichi Nakamura,
Tae Tamori,
Yoshiyuki Kuboki,
Yoshiyuki Yonezawa and
Masaharu Nishiura
Masahide Gotoh
Affiliation:
gotoh-masahide@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan, +81-263-27-7429, +81-263-28-5573
Takeshi Tawara
Affiliation:
tawara-takeshi@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Shun-ichi Nakamura
Affiliation:
nakamura-shunichi@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Tae Tamori
Affiliation:
tamori-tae@fujielectric.co.jp, Fuji Electric Advanced Technology, Material and Science Laboratory, 1, Fuji-machi, Hino, Tokyo, 191-8502, Japan
Yoshiyuki Kuboki
Affiliation:
kuboki-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology, Material and Science Laboratory, 1, Fuji-machi, Hino, Tokyo, 191-8502, Japan
Yoshiyuki Yonezawa
Affiliation:
yonezawa-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Masaharu Nishiura
Affiliation:
nishiura-masaharu@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
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Abstract

In this study, we investigated surface features formed by molten KOH etching of (000-1) substrates and epilayers, using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). We found the surface features formed on (000-1) are protrusions, in contrast to well-known dimples on (0001).

Keywords

dislocationsscanning electron microscopy (SEM)transmission electron microscopy (TEM)

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References

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