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Dislocations and Slip Systems in V3Si

Published online by Cambridge University Press:  01 January 1992

L.S. Smith,
M. Aindow and
M.H. Loretto
L.S. Smith
Affiliation:
IRC in Materials for High Performance Applications, and School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK.
M. Aindow
Affiliation:
IRC in Materials for High Performance Applications, and School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK.
M.H. Loretto
Affiliation:
IRC in Materials for High Performance Applications, and School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK.
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Abstract

A transmission electron microscopy study of the defect structure in Czochralski single crystals of V3Si is presented. As grown crystals contain occasional V5Si3 precipitates and a low density of edge dislocations with b = a<100>. Following deformation to 4% strain at 1600°C in compression much higher densities of precipitates and screw dislocations are present. Images of the dislocations are doubled under certain conditions and it is suggested that this corresponds to a dissociation of the form; a<100> ∭ a/2<100> + CSF + a/2<100>, as observed previously in Nb3Al. The significance of this dissociation for deformation mechanisms in V3Si is discussed.

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References

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