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Disorder-Delineated AlGaAs/GaAs Quantum-Well Phase Modulator

Published online by Cambridge University Press:  10 February 2011

Wallace C. H. Choy and
Bernard L. Weiss
Wallace C. H. Choy
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
Bernard L. Weiss
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
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Abstract

Modeling is used to investigate waveguide phase modulators, with 0.5 μm and 1 μm quantum well active regions which are defined by implantation induced disordering. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single mode operation. The performance of the phase modulator is studied in terms of optical confinement, phase change per unit voltage per unit length, chirping property and absorption loss. Our result shows that the 0.5 μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 kV/cm to 100 kV/cm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997, 453
Copyright
Copyright © Materials Research Society 1998

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