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Doping in III-V Semiconductors

Published online by Cambridge University Press:  22 February 2011

E. F. Schubert
E. F. Schubert*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Doping of III-V semiconductors is an essential part of growth and processing technology for optoelectronic and high speed electronic devices. This review covers several recent developments in III-V doping including (i) the high-concentration regime for p-type dopants in InP and GaAs, (ii) the sensitivity of doping incorporation on the crystal orientation, (iii) compensation mechanisms in Si-doped GaAs, and (iv) p-type carbon doping in GaAs and AlxGa1-xAs.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994, 273
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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