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Doping Mechanism in Tetrahedral Amorphous Carbon

Published online by Cambridge University Press:  10 February 2011

C W Chen and
J Robertson
C W Chen
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
J Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
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Abstract

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

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