Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-12T19:52:43.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

Published online by Cambridge University Press:  01 February 2011

Kazuki Nomoto,
Nobuyuki Ito,
Taku Tajima,
Takeshi Kasai,
Tomoyoshi Mishima,
Taroh Inada,
Masataka Satoh and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
i04r3233@k.hosei.ac.jp, HOSEI UNIV., EECE, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan, +81-42-387-5104, +81-42-387-6095
Nobuyuki Ito
Affiliation:
i04r3205@k.hosei.ac.jp, HOSEI UNIV., EECE, Japan
Taku Tajima
Affiliation:
i05r3229@k.hosei.ac.jp, HOSEI UNIV., EECE, Japan
Takeshi Kasai
Affiliation:
i04r3233@k.hosei.ac.jp, Chemitronics, Japan
Tomoyoshi Mishima
Affiliation:
i04r3233@k.hosei.ac.jp, Hitachi Cable, Japan
Taroh Inada
Affiliation:
i04r3233@k.hosei.ac.jp, HOSEI UNIV., EECE, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, HOSEI UNIV., EECE, Japan
Tohru Nakamura
Affiliation:
tohru@k.hosei.ac.jp, HOSEI UNIV., EECE, Japan
Get access

Abstract

Incorporation of Si ion implantation to GaN metal semiconductor field effect transistor (MESFET) processing has been demonstrated. The channel and source/drain regions formed using Si ion implantation into undoped GaN on sapphire substrate. In comparison with the conventional devices without ion implanted source/drain structures, the ion implanted devices showed excellent device performance. On-state resistance reduces from 210 Ω-mm to 105 Ω-mm. Saturation drain current and maximum transconductance increase from 36 mA/mm to 78 mA/mm and from 3.8 mS/mm to 10 mS/mm, respectively.

Keywords

III-Vion-implantationdevices

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005, 0892-FF13-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Yu, Haijiang, McCarthy, L., Rajan, S., Keller, S., Denbaars, S., Speck, J., and Mishra, U., “Ion Implanted AlGaN-GaN HEMTs With Nonalloyed Ohmic Contacts”, IEEE Electron Device Letters, Vol. 26, No. 5, pp. 283–285 (2005).Google Scholar
2. Wang, Wen-Kai, Lin, Po-Chen, Lin, Ching-Huao, Lin, Cheng-Kuo, Chan, Yi-Jen, Chen, Guan-Ting, and Chyi, Jen-Inn, “Performance Enhancement by Using the n+-GaN Cap Layer and Gate Recess Technology on the AlGaN-GaN HEMT Fabrication”, IEEE Electron Device Letters, Vol. 26, No. 1, pp. 5–7 (2005).CrossRefGoogle Scholar
3. Murata, Tomohiro, Hikitra, Masahiro, Hirose, Yutaka, Uemoto, Yasuhiro, Inoue, Kaoru, Tanaka, Tsuyoshi and Ueda, Daisuke, “Source Resistance of AlGaN-GaN HFETs with Novel Superlattice Cap Layer”, IEEE Transaction on Electron Devices, Vol. 52, No. 6, pp. 1042–1047 (2004).CrossRefGoogle Scholar
4. Zolper, J. C., Shul, R. J., Baca, A. G., Wilson, R. G., Pearton, S. J., and Stall, R. A., “Ion-implanted GaN Junction Field Effect Transistor”, Appl. Phys. Lett. Vol. 68(16), 15, pp. 2273–2275 (1996).CrossRefGoogle Scholar
5. Islam, Syed S., Anwar, A.F.M., “Thermal and Trapping Effects in GaN-Based MESFETs”, IEEE Lester Eastman Conference on 6–8, pp. 108–117 (2002).Google Scholar
6. Lee, C., Lu, W., Piner, E., and Adesida, I., “Recessed-Gate GaN MESFET using ICP-RIE for High Temperature Microwave Applications”, Conference Digest. 58th DRC19–21, pp. 41–42 (2000).Google Scholar