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Dry Etching of SiC for Advanced Device Applications

Published online by Cambridge University Press:  10 February 2011

J. R. Flemish,
K. Xie and
G. F. Mclane
J. R. Flemish
Affiliation:
Army Research Laboratory, Physical Sciences Directorate, Fort Monmouth, NJ 07703
K. Xie
Affiliation:
Army Research Laboratory, Physical Sciences Directorate, Fort Monmouth, NJ 07703
G. F. Mclane
Affiliation:
Army Research Laboratory, Physical Sciences Directorate, Fort Monmouth, NJ 07703
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Abstract

In this paper we review and compare most of the published results on dry etching of silicon carbide using various techniques. The vast majority of reports have used RIE methods due to the wide availability of such reactors. Recently, alternative methods of magnetron enhanced RIE (MIE) and electron cyclotron resonance (ECR) plasmas have been demonstrated. MIE has resulted in extremely high etch rates and ECR etching has resulted in smooth, residue-free surfaces with an ability to control the etched profiles.

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