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Dual Electron Beam Processing System for Semiconductor Materials

Published online by Cambridge University Press:  15 February 2011

R.A. McMahon,
J.R. Davis and
H. Ahmed
R.A. McMahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
J.R. Davis
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
H. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 1PZ
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Abstract

This paper describes a semiconductor processing system using two electron beams. One beam provides uniform heating of the bulk of the specimen, whilst the other performs localized heating, for example as a spot, a line beam, or as an inset scan. The annealing of localized regions in ion-implanted silicon and SOS, by local heating above the bulk temperature, illustrates the application of the system. Other applications of the systems are also considered.

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References

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