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The Dynamics of Cadmium Telluride Etching

Published online by Cambridge University Press:  01 February 2011

K. D. Dobson,
P. D. Paulson,
B. E. McCandless and
R. W. Birkmire
K. D. Dobson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
P. D. Paulson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
B. E. McCandless
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
R. W. Birkmire
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
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Abstract

CdTe etching was investigated using variable angle spectroscopic ellipsometry and glancing angle x-ray diffraction. Treatment with HNO3:H3PO4 (NP) based etches was shown to form amorphous-Te surface films which spontaneously crystallize following etching. Br2/methanol (BM) etching forms very thin amorphous-Te films. NP-etched surfaces are stable in ambient air for ∼1 hr before beginning to oxidize, while BM etched films oxidize immediately following treatment. CdTe grain boundary etching by NP was minimized using more acidic etches. Device analysis suggests that a higher Te content produces more stable back contacts by attenuating Cu diffusion. Mechanistic details of NP etching are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003, B3.1
Copyright
Copyright © Materials Research Society 2003

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References

[1] Sarlund, J., Ritala, M., Leskela, M., Siponmaa, E. and Zilliacus, R., Sol. Energy Mater. Sol. Cells, 44, 177 (1996).Google Scholar
[2] Danaher, W. J., Lyons, L. E., Marychurch, M. and Morris, G. C., Appl. Surf. Sci., 27, 338 (1986).Google Scholar
[3] Haring, J.-P., Werthen, J. G. and Bube, R. H., J. Vac. Sci. Technol. A, 1, 1469 (1983).Google Scholar
[4] Arwin, H., Aspnes, D. E. and Rhiger, D. R., J. Appl. Physl., 54, 7132 (1984).Google Scholar
[5] Li, X., Niles, D. W., Hasoon, F. S., Matson, R. J. and Sheldon, P., J. Vac. Sci. Technol. A, 17, 805 (1999).Google Scholar
[6] Aspnes, D. E. and Arwin, H., J. Vac. Sci. Technol. A, 2, 1309 (1984).Google Scholar
[7] Lee, W. Y., Coufal, H., Davis, C. R., Jipson, V., Lim, G., Parrish, W., Sequeda, F., and Davis, R. E., J. Vac. Sci. Technol. A, 4, 2988 (1986).Google Scholar
[8] Batzner, D. L., Wendt, R., Romeo, A., Zogg, H., Tiwari, A. N., Thin Solid Films, 361, 463 (2000).Google Scholar
[9] CRC Handbook of Chemistry and Physics, 70th ed., edited by Weast, R. C. and Astle, M. J. (CRC Press, Boca Raton, FL, 1989).Google Scholar
[10] Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solutions (Pergamon Press, Oxford, 1966).Google Scholar
[11] Dobson, K. D., I. Visoly-Fisher, Hodes, G. and Cahen, D., Sol. Energy Mater. Sol. Cells, 62, 295 (2000).Google Scholar