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Effect of Concentration Gradient on Phase Stability

Published online by Cambridge University Press:  15 February 2011

K.N. Tu and
U. GöSele
K.N. Tu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
U. GöSele*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
*
* Present address: Max-Planck Institute, Stuttgart, Federal Republic of Germany
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Abstract

A feature of thin film reaction that is different from the reaction in bulk samples is the tendency to form a single intermetallic compound rather than all of them which are allowed according to the equilibrium phase diagram. For example, in thin film silicide formation, Pd2Si has been found to form alone and to grow as a layer between Pd and Si. The silicide is stable over a wide temperature range of 100 to 700°C. The phenomenon of single intermetallic compound growth is not unique to silicide formation between transition metal films and silicon, but is also commonly observed in reactions between bimetallic thin films. The phenomenon indicates phase stability.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 19: Symposium E – Alloy Phase Diagrams , 1982, 375
Copyright
Copyright © Materials Research Society 1983

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References

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