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Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

Published online by Cambridge University Press:  25 February 2011

F. Namavar,
E. Cortesi,
R.F. Pinizzotto and
H. Yang
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
E. Cortesi
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
R.F. Pinizzotto
Affiliation:
University of North Texas, Dentón, TX
H. Yang
Affiliation:
University of North Texas, Dentón, TX
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Abstract

We have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989, 179
Copyright
Copyright © Materials Research Society 1990

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References

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