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Effect Of Pressure On Boron Diffusion In Silicon

Published online by Cambridge University Press:  15 February 2011

Yuechao Zhao,
Michael J. Aziz,
Salman Mitha and
David Schiferl
Yuechao Zhao
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Salman Mitha
Affiliation:
Charles Evans and Associates, Redwood City, CA 94063
David Schiferl
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

We are studying the effect of pressure on boron diffusion in silicon in order to better understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers deltadoped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities were deduced from B concentration-depth profiles measured with using secondary ion mass spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 °C, characterized by an average activation volume of -0.125±0.02 times the atomic volume, and thus appear consistent with an interstitial-based diffusion mechanism. Results are compared with previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic calculations of activation volumes for self diffusion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996, 305
Copyright
Copyright © Materials Research Society 1997

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