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Effect of Si and Er Co-doping on Green Electroluminescence from GaN:Er ELDs

Published online by Cambridge University Press:  01 February 2011

Rui Wang and
Andrew J Steckl
Rui Wang
Affiliation:
wangri@email.uc.edu, University of Cincinnati, Electrical & Computer Engineering, 910 Rhodes Hall, Cincinnati, OH, 45221, United States, 5135564829, 5135561549
Andrew J Steckl
Affiliation:
a.steckl@uc.edu, University of Cincinnati, Department of Electrical & Computer Engineering, Cincinnati, OH, 45221-0030, United States
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Abstract

(Er, Si) co-doped GaN thin films were grown on Si substrates by molecular beam epitaxy (MBE) technique. Electroluminescent devices (ELDs) were fabricated and the effect of Si co-doping on the performance of GaN devices was studied. Previous results with GaN:Er ELDs reported that electroluminescence (EL) was much stronger in reverse bias than in forward bias condition, indicating that the dominant factor in EL intensity was the electric field. The results reported here show the first time GaN:Er ELDs where forward bias EL is very much larger, indicating that the dominant factor is forward bias current. The electrical properties of (Si, Er) co-doped GaN thin films are believed to be responsible for the current control mechanism.

Keywords

Erluminescencemolecular beam epitaxy (MBE)

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References

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