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EL2 and Related Defects in GaAs--Challenges and Pitfalls

Published online by Cambridge University Press:  28 February 2011

H. C. Gatos and
J. Lagowski
H. C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry, and the presence of two sublattices. Many of the microdetects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. We must, therefore, rely on indirect methods and phenomenological models and be confronted with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. We will attempt to assess the present status of understanding of EL2 in the light of the most recent results.

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