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Electrical Characterization of Crystallized—Silicon Thin Films

Published online by Cambridge University Press:  28 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

A review is presented on the application of electrical measurements to evaluate the existence and effects of residual electronic defects in crystallized—silicon thin films. Experimental techniques include current—voltage characterization, electronbeam—induced conductivity, transient—capacitance measurements on thin—film capacitors, transient—conductance spectroscopy on thin—film transistors, and photoconductivity.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985, 337
Copyright
Copyright © Materials Research Society 1986

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References

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