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Electrical Relaxation Studies in Fluorite Oxides

Published online by Cambridge University Press:  21 February 2011

Partho Sarkar and
Patrick S. Nicholson
Partho Sarkar
Affiliation:
Ceramic Engineering Research Group Department of Materials Science and Engineering McMaster University Hamilton, Ontario, Canada
Patrick S. Nicholson
Affiliation:
Ceramic Engineering Research Group Department of Materials Science and Engineering McMaster University Hamilton, Ontario, Canada
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Abstract

Electric relaxation in CeO2-M203 (M34 sY3+, La3+) solid solutions has been investigated as a function of temperature (373K-673K) using the electric modulus formalism in the frequency range 5 to 107Hz. Two relaxation processes are observed in dilute solid solutions. The low frequency process is identified as a long range migration of free oxygen-vacancies (Process A) and the high frequency process is due to reorientation relaxation of the (MceVo) charged associates (Process B). The relaxation process is analysed using a non-exponential decay function, ø(t)=exp[-(t/τo)B] for O<β≤1, of the electric field. The observed activation enthalpy minimum as a function of dopant concentration for the Process A is explained using the concept of incomplete dissociation of oxygen-vacancies from (MceVo) defect associates and the formation of higher-order defect clusters at higher mole% M203.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 135: Symposium M – Solid State Ionics I , 1988, 271
Copyright
Copyright © Materials Research Society 1989

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