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Electrical & Structural Properties of TiSi2 Films

Published online by Cambridge University Press:  28 February 2011

N.M. Ravindra,
T. Fink,
R.P. Moerkirk Jr and
D. Fathy
N.M. Ravindra
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
T. Fink
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
R.P. Moerkirk Jr
Affiliation:
U.S. Army Electronics, Technology & Devices Laboratory, Fort Monmouth, NJ 07703
D. Fathy
Affiliation:
D. Fathy, Solid State Division, Oak Ridge National Labs, Oak Ridge, TN 37831
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Abstract

Studies of the electrical and structural properties of TiSi2 films formed during the fabrication of shallow junctions by ion implanting As+ into p–Si through Ti films are reported here. Electrical measurements of the temperature dependent specific contact resistance and structural measurements such as transmission electron microscopy have been performed on these device structures. The specific contact resistance is seen to decrease with increasing measurement temperature. These studies have been carried out on furnace and rapid thermally annealed films.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988, 459
Copyright
Copyright © Materials Research Society 1988

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References

1 Murarka, S.P., Silicides for VLSI Applications, Academic Press, Orlando (1983).Google Scholar
2 Hung, L.S., Gyulai, J., Mayer, J.W., Lau, S.S. & Nicolet, M.A., J. Appl. Phys., 54, 5076 (1983).Google Scholar
3 Alperin, M.E., Hollaway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V. & Parmantie, W.D., IEEE Trans. Elect. Devices, ED–32, 141 (1985).Google Scholar
4 Murarka, S.P., Ann. Rev. Mater. Sci., 13, 117 (1983).Google Scholar
5 Murarka, S.P., Thin Solid Films, 140, 35 (1986).Google Scholar
6 d'Heurle, F.M. & Gas, P., J. Mater. Res., 1, 205 (1986).Google Scholar
7 Ottaviani, G., Thin Solid Films, 140, 3 (1986).Google Scholar
8 Jiang, H., Petersson, C.S. & Nicolet, M.A., Thin Solid Films, 140, 115 (1986).Google Scholar
9 d'Heurle, F.M., J. Mater. Res., 3, 167 (1988).Google Scholar
10 Okabayashi, H., Morimoto, M. & Nagasawa, E., IEEE Trans. Elect. Devices, ED–31, 1329 (1984).Google Scholar
11 Delfino, M., Broadbent, E.K., Morgan, A.E., Burrow, B.J. & Norcott, M.H., IEEE Elect. Device Lett., EDL–6, 591 (1985).Google Scholar
12 Beyers, R., Coulman, D. & Merchant, P., J. Appl. Phys., 61,5110 (1987).Google Scholar
13 Kwong, D.L., Meyers, D.C. & , Alvi, IEEE Elect. Device Lett., EDL–6, 244 (1985).Google Scholar
14 Fathy, D. Stephenson, T.S., Mater. Lett., 5, 315 (1987).Google Scholar
15 Yu, A.Y.C., Solid State Electron., 33, 239 (1970).Google Scholar
16 Chang, C.Y., Kang, Y.F. & Sze, S.M., Solid State Electron., 14, 541 (1971).Google Scholar
17 Sze, S.M., Physics of Semiconductor Devices, 2nd Edition, Wiley, New York (1981).Google Scholar
18 Murarka, S.P. & Fraser, D.B., J. Appl. Phys., 51, 342 (1980).Google Scholar