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Electromigration Characterization for Multilevel Metallizations using Textured AlCu

Published online by Cambridge University Press:  15 February 2011

Larry M. Ting and
Qi-Zhong Hong
Larry M. Ting
Affiliation:
Semiconductor and Process Design Center, Texas Instruments, Dallas, TX 75265
Qi-Zhong Hong
Affiliation:
Semiconductor and Process Design Center, Texas Instruments, Dallas, TX 75265
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Abstract

Electromigration lifetime dependence on crystallographic texture for AlCu interconnects is determined. It is found that enhancement of AlCu texture at <111> orientation improves EM endurance. But this beneficial effect is limited after a certain level of texture enhancement is reached. The effect of lifetime improvement is proved to result from a decrease in atomic diffusivity. Saturation of the lifetime improvement effect for highly textured AlCu indicates a change in the main diffusion mechanism for electromigration, possibly from the regular grain boundary diffusion to diffusion through edge dislocations.

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