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Electromigration Characterization Versus Texture Analysis in Damascene Copper Interconnects

Published online by Cambridge University Press:  17 March 2011

T. Berger ,
L. Arnaud ,
R. Gonella ,
I. Touet  and
G. Lormand
T. Berger
Affiliation:
ST MICROELECTRONICS, 38926 Crolles CEDEX, FRANCE
L. Arnaud
Affiliation:
CEA, Direction des Technologies Avancées, 38054 Grenoble CEDEX, FRANCE
R. Gonella
Affiliation:
ST MICROELECTRONICS, 38926 Crolles CEDEX, FRANCE
I. Touet
Affiliation:
CEA, Direction des Technologies Avancées, 38054 Grenoble CEDEX, FRANCE
G. Lormand
Affiliation:
GEMPPM UMR CNRS 5510, INSA, 69621 Villeurbanne CEDEX, FRANCE
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Abstract

We have studied the effect of texture (X-ray diffraction pole figures) and grain morphology (Focus Ion Beam cross-sections) on the electromigration performances of copper damascene interconnects. Three different metallizations have been characterized : Chemical Vapor Deposition copper deposited on TiN (process A) and electroplated copper deposited either on Ta (process B) or TaN (process C). The reliability performance of these interconnects has been evaluated using both Wafer Level Reliability (WLR) and Package Level Reliability (PLR) tests on 4 and 0.6 νm wide lines using single metal level test structures. On the basis of the activation energy values and failure analysis observations, we concluded that interfacial diffusion plays a key role in the electromigration phenomenon for processes B and C whereas grain boundaries seem to be the active diffusion path for process A. The existence of several failure mechanisms during electromigration tests (interfacial or grain boundary diffusions), the impact of the damascene architecture on microstructure (sidewall textures and non columnar grain shapes) and the copper propensity for twinning seem to mask the impact of texture on the electromigration reliability of copper damascene interconnects.

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