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Electromigration Damage in Conductor Lines: Recent Progress in Microscopic Observation and Mechanistic Modelling

Published online by Cambridge University Press:  22 February 2011

E. Arzt,
O. Kraft and
U.E. MÖckl
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, Stuttgart, Germany
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, Stuttgart, Germany
U.E. MÖckl
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, Stuttgart, Germany
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Abstract

In this paper an overview of recent developments in understanding electromigration damage mechanisms is given. Based on our detailed studies, both ex-situ and in-situ, of damage in unpassivated near-bamboo lines, we develop a theoretical electromigration damage map. It explains why “slit-like” failure becomes predominant for narrow lines and low current densities. The mechanism of slit formation is discussed in the light of new analytical and numerical simulations of pore shape changes, which take stress effects into account. Possible implications for the rational design of improved metallization alloys are suggested.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994, 397
Copyright
Copyright © Materials Research Society 1994

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References

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