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Electron Paramagnetic Resonance in Semiconductors

Published online by Cambridge University Press:  15 February 2011

James W. Corbett,
Richard L. Kleinhenz and
Neal D. Wilsey
James W. Corbett
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
Richard L. Kleinhenz
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
Neal D. Wilsey
Affiliation:
Institute for the Study of Defects in Solids, Physics Department, State University of New York at Albany, Albany, New York 12222
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Abstract

The use of electron paramagnetic resonance (EPR) in the study of defects in semiconductors is briefly reviewed, including group IV (C-diamond, Si, Ge, SiC), III-V (AlSb, GaAs, GaSb, GaP, InAs, InP, InSb), II-VI (BaO, BaS, BeO, CaO, CaS, CaSe, CdO, CdS, CdSe, CdTe, MgO, SrO, SrS, ZnO, ZnS, ZnSe, ZnTe) and miscellaneous svstems. The identification of defects via EPR is described as is the exploitation of that identification as a tool in future studies. Particular attention is paid to Si, where is emerging an integrated panorama of identified defects ranging from point defects to aggregates through intermediate defect configurations (as discussed by Tan) to dislocations and stacking faults; EPR results in Si as a testing ground for the theory of shallow donors, in the understanding of diffusion at high temperatures and in the study of heat-treatment defects are discussed as examples of the use of EPR as a tool in defect studies.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 1
Copyright
Copyright © Materials Research Society 1981

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References

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