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Electron Transfer at the n-InP | Poly(Pyrrole) Interface

Published online by Cambridge University Press:  10 February 2011

Mark C. Lonergan,
Christopher T. Cooney and
James A. Myers
Mark C. Lonergan
Affiliation:
Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Christopher T. Cooney
Affiliation:
Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
James A. Myers
Affiliation:
Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
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Abstract

Measurements of the barrier height by capacitance-voltage techniques and of the equilibrium exchange current density by current-voltage techniques are performed on the rectifying interface between n-InP and poly(pyrrole) (chemically polymerized and characterized by an electrochemical potential of ≈0.2V vs. SCE). The current-voltage data yielded a quality factor of 1.2±0.1 and an equilibrium exchange current density of (1.2±0.6) x 10−9. A cm−2. The capacitance-voltage data yielded a barrier height of 0.73 ± 0.02 V and measured dopant densities within 15% of the expected value. These data, taken together, are inconsistent with thermionic emission theories developed to describe inorganic semiconductor I metal interfaces and often applied to inorganic semiconductor I doped conjugated polymer interfaces. In particular, the ratio of the rate constant for majority carrier electron capture (surface recombination velocity) at the n-InP | poly(pyrrole) interface to that at n-InP | metal interfaces is found to be (6 ± 5) × 10−3.

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