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Electronic Defects in Metalorganic GaAIAs

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson,
R. D. Burnham,
D. Fekete and
R. D. Yingling
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
R. D. Burnham
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
D. Fekete
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
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Abstract

Electronic defect levels have been measured in n-type epitaxial films of Gal - XAIXAs (0≤X≤0.33) which were grown by metalorganic chemical vapor deposition. Electron traps were characterized by transient capacitance spectroscopy on Schottky-barrier diodes. The thermal activation energy for electron emission from the near-midgap defect level is found to be larger in Ga1 - XAIXAs than the value of 0.83 eV generally observed in GaAs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 481
Copyright
Copyright © Materials Research Society 1981

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References

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