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Electronic Properties of Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

R. Carius,
F. Finger,
U. Backhausen,
M. Luysberg,
P. Hapke,
L. Houben,
M. Otte and
H. Overhof
R. Carius
Affiliation:
ISI-PV, Forschungszentrum Jülich, D-52425 Jülich, Germany
F. Finger
Affiliation:
ISI-PV, Forschungszentrum Jülich, D-52425 Jülich, Germany
U. Backhausen
Affiliation:
ISI-PV, Forschungszentrum Jülich, D-52425 Jülich, Germany
M. Luysberg
Affiliation:
IFF-IMF Forschungszentrum Jülich, D-52425 Jülich, Germany
P. Hapke
Affiliation:
ISI-PV, Forschungszentrum Jülich, D-52425 Jülich, Germany
L. Houben
Affiliation:
ISI-PV, Forschungszentrum Jülich, D-52425 Jülich, Germany
M. Otte
Affiliation:
Fachbereich Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
H. Overhof
Affiliation:
Fachbereich Physik, Universität-GH Paderborn, D-33098 Paderborn, Germany
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Abstract

The electronic and optical properties of microcrys tall ine silicon films prepared by plasma enhanced chemical vapour deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in un-doped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.

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References

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