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Electronic Properties of Si - Ge Micro Nipi Structures

Published online by Cambridge University Press:  28 February 2011

L. H. Yang,
C. Y. Fong and
J. S. Nelson
L. H. Yang
Affiliation:
Department of Physics, University of California, CA 95616
C. Y. Fong
Affiliation:
Department of Physics, University of California, CA 95616
J. S. Nelson
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
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Abstract

Electronic properties of the n-doping--insulator--p-doping--insulator structures in ultra thin strained [001] Si - Ge superlattice have been studied theoretically. The Ge - layer is used as one of the insulating region. The Al and As atoms are treated as impurities. The superlattice ((Si)10 -(Ge)2) exhibits an indirect gap in reciprocal space and the staggered band alignment in real space. With doping, the samples show a direct band gap and staggered band alignment. The acceptor state is associated with the Al-Si bonding state, while the donor state is derived from the As s-like state. The separation of the charge carriers in the real space can be obtained.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988, 513
Copyright
Copyright © Materials Research Society 1988

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