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Electronic Structure of Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

G. Allan,
C. Delerue and
M. Lannoo
G. Allan
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
M. Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
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Abstract

The electronic structure of a continuous network model of tetrahedrally bonded amorphous silicon (a-Si) and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Valence band offset between the amorphous and the crystalline phases is calculated.

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